METHOD FOR MANUFACTURING A SCHOTTKY DIODE AND CORRESPONDING INTEGRATED CIRCUIT

A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type...

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Bibliographic Details
Main Author MARZAKI, Abderrezak
Format Patent
LanguageEnglish
Published 25.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first metal contact is disposed on a surface of the N-type doped first cathode region and a second metal contact is disposed on a surface of the undoped second anode region. The first metal contact and second metal contact are electrically insulated from each other by an insulating layer on the layer of polysilicon.
Bibliography:Application Number: US202318224293