SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRICATION THEREFOR

A semiconductor device, such as a heterojunction bipolar transistor (HBT), may include an extrinsic base region that is connected to a collector region via semiconductor material formed in an opening in one or more dielectric layers interposed between the extrinsic base region and the collector regi...

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Bibliographic Details
Main Authors Radic, Ljubo, Donkers, Johannes Josephus Theodorus Marinus, Grote, Bernhard
Format Patent
LanguageEnglish
Published 25.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device, such as a heterojunction bipolar transistor (HBT), may include an extrinsic base region that is connected to a collector region via semiconductor material formed in an opening in one or more dielectric layers interposed between the extrinsic base region and the collector region. The extrinsic base region may be formed from monocrystalline semiconductor material, such as silicon or silicon germanium, via selective epitaxial growth. An intrinsic base region may be formed adjacent to the extrinsic base region and may be interposed directly between the collector region and an intrinsic emitter region. A HBT with such an arrangement may have reduced base-collector capacitance and reduced base resistance compared to some conventional HBTs.
Bibliography:Application Number: US202217813504