REPLACEMENT STRUCTURES

Provided are devices with replacement structures and methods for fabricating such structures. A method includes forming a layer over a semiconductor material having a top surface in a horizontal plane; forming a dummy structure over the layer, wherein the dummy structure has sidewall, wherein the du...

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Bibliographic Details
Main Authors Kao, Kuei-Yu, Chang, Ming-Ching, Chen, Chao-Cheng, Chiu, Chih-Chung, Chen, Chen-Ping, Li, Chih-Han, Lin, Shih-Yao
Format Patent
LanguageEnglish
Published 11.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are devices with replacement structures and methods for fabricating such structures. A method includes forming a layer over a semiconductor material having a top surface in a horizontal plane; forming a dummy structure over the layer, wherein the dummy structure has sidewall, wherein the dummy structure lies directly over a first region of the layer and over a first region of the semiconductor material under the first region of the layer, and wherein the dummy structure does not lie directly over a second region of the layer or over a second region of the semiconductor material under the second region of the layer, and removing the second region of the layer and forming a side edge of the first region of the layer, wherein the side edge forms an angle of from 90 to 100 degrees with the horizontal plane.
Bibliography:Application Number: US202217811739