GATE-TOP DIELECTRIC STRUCTURE FOR SELF-ALIGNED CONTACT

• Main Authors: Chen, Yi-Hsien, Li, Chung-Ting, Lin, Ta-Chun, Mor, Yi-Shien, Luo, Wen-Cheng, Chang, Chih-Hao
• Format: Patent
• Language: English
• Published: 11.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes an active region having a channel region and a source/drain region, a gate structure over the channel region, a gate spacer layer disposed over the channel region and extending along a sidewall of the gate structure, an epitaxial source/drain feature over the source/drain region, a contact etch stop layer (CESL) disposed on the epitaxial source/drain feature and extending along a sidewall of the gate spacer layer, a source/drain contact disposed over the epitaxial source/drain feature, and a dielectric cap layer disposed over the gate structure, the gate spacer layer and at least a portion of the CESL. A sidewall of the source/drain contact is in direct contact with a sidewall of the CESL.