METHOD FOR FORMING A LIFT-OFF MASK STRUCTURE

A method for forming a lift-off mask structure includes providing a substrate body, depositing a layer of bottom anti-reflective coating, BARC, over a surface of the substrate body, and depositing a layer of photosensitive resist over the BARC layer. The method further includes exposing the resist l...

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Bibliographic Details
Main Authors Pertl, Patrik, Eilmsteiner, Gerhard
Format Patent
LanguageEnglish
Published 11.01.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method for forming a lift-off mask structure includes providing a substrate body, depositing a layer of bottom anti-reflective coating, BARC, over a surface of the substrate body, and depositing a layer of photosensitive resist over the BARC layer. The method further includes exposing the resist layer to electromagnetic radiation through a photomask, and forming the lift-off mask structure by applying a developer for selectively removing a portion of the BARC layer and of the resist layer such that an underlying portion of the surface of the substrate body is exposed.
Bibliography:Application Number: US202118041708