PRESSURE DETECTION DEVICE AND MANUFACTURING METHOD

Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of...

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Bibliographic Details
Main Authors ITO, Yuichi, NISHIKAWA, Mutsuo
Format Patent
LanguageEnglish
Published 11.01.2024
Subjects
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Summary:Provided is a pressure detection device including: a semiconductor substrate having an upper surface; a bulk region of a first conductivity type provided in the semiconductor substrate; a piezo-resistive region of the first conductivity type provided between the bulk region and the upper surface of the semiconductor substrate; a first well region of a second conductivity type provided between the piezo-resistive region and the bulk region; and a first low-concentration region of the second conductivity type provided between the first well region and the bulk region and having a lower concentration than the first well region.
Bibliography:Application Number: US202318323392