MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

• Main Author: OGISO, Yusuke
• Format: Patent
• Language: English
• Published: 04.01.2024
• Subjects: ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; LIME, MAGNESIA; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; REFRACTORIES; SLAG; SOLDERING OR UNSOLDERING; TRANSPORTING; TREATMENT OF NATURAL STONE; WELDING; WORKING BY LASER BEAM

A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.