NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS

Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) stacked above a second FET in a non-step nanosheet structure, and a bottom contact electrically connected to a first bottom source/drain (S/D) of the second FET through a portion of a first top...

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Bibliographic Details
Main Authors Mochizuki, Shogo, Tsutsui, Gen
Format Patent
LanguageEnglish
Published 04.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) stacked above a second FET in a non-step nanosheet structure, and a bottom contact electrically connected to a first bottom source/drain (S/D) of the second FET through a portion of a first top S/D of the first FET.
Bibliography:Application Number: US202217809595