SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

• Main Authors: KISHI, Hiroki, YAMANAKA, Takanori, FUJITSUKA, Ryota
• Format: Patent
• Language: English
• Published: 28.12.2023
• Subjects: ELECTRICITY

A semiconductor memory device includes: a stack having an insulating layer and a conductive layer, each layer being stacked alternately in a first direction; a semiconductor layer through the insulating and the conductive layer; a memory layer between the stack and the semiconductor layer in a second direction; and an insulation extending from the insulating layer toward the semiconductor layer in the second direction. The insulation and the memory layer define an interface therebetween in a cross-section, the interface having a first point and a second point, the first point overlapping with a middle portion of the insulating layer, the second point overlapping with an end portion of the insulating layer. The second point is closer to the insulating layer in the second direction than the first point is. The interface curves from the first point to the second point to protrude toward the semiconductor layer.