SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
28.12.2023
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Online Access | Get full text |
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Summary: | A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a first gate oxide layer on the substrate, removing the first gate oxide layer to form a second step on the corner of the substrate, forming a second gate oxide layer on the substrate, and then forming a first gate structure on the substrate and the STI. |
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Bibliography: | Application Number: US202217869752 |