SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a...

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Bibliographic Details
Main Authors Chiu, Yung-Chen, Pai, Chi-Horn, Lee, Kuo-Hsing, Hsueh, Sheng-Yuan, Kang, Chih-Kai
Format Patent
LanguageEnglish
Published 28.12.2023
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Summary:A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a first gate oxide layer on the substrate, removing the first gate oxide layer to form a second step on the corner of the substrate, forming a second gate oxide layer on the substrate, and then forming a first gate structure on the substrate and the STI.
Bibliography:Application Number: US202217869752