SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

A semiconductor structure is provided. The semiconductor structure includes a plurality of nanostructures vertically stacked and separated from one another, a source/drain feature adjacent to the plurality of nanostructures, and an inner spacer layer. The inner spacer layer includes a vertical porti...

Full description

Saved in:
Bibliographic Details
Main Author FUNG, Ka-Hing
Format Patent
LanguageEnglish
Published 28.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor structure is provided. The semiconductor structure includes a plurality of nanostructures vertically stacked and separated from one another, a source/drain feature adjacent to the plurality of nanostructures, and an inner spacer layer. The inner spacer layer includes a vertical portion interposing between the plurality of nanostructures and the source/drain feature and a plurality of horizontal portions interposing between the nanostructures. A source/drain junction is located in the vertical portion of the inner spacer layer and is spaced apart from the plurality of nanostructures by a distance.
Bibliography:Application Number: US202318464839