FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasti...

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Bibliographic Details
Main Authors GAUTHIER, JR., Robert J, MIAO, Meng, LOISEAU, Alain F, LIANG, Wei, MITRA, Souvick, LI, You
Format Patent
LanguageEnglish
Published 28.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.
Bibliography:Application Number: US202318462779