Method of Fabricating Thin, Crystalline Silicon Film and Thin Film Transistors

• Main Author: Kakkad, Ramesh Kumar Harjivan
• Format: Patent
• Language: English
• Published: 28.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of producing a polycrystalline silicon TFT includes forming nickel patterns on a substrate, forming a phosphorus doped silicon layer over the substrate and nickel patterns, and forming an intrinsic silicon layer on the phosphorus doped silicon layer. Alternatively, the intrinsic silicon layer can be formed on the substrate, the phosphorus doped silicon layer on the intrinsic silicon layer, and the nickel patterns on the phosphorus doped silicon layer. The structure is annealed to crystallize the phosphorus doped silicon and intrinsic silicon layers. A method of forming a crystalline silicon layer of a TFT device includes forming a first silicon film, forming a phosphorus doped silicon film on the first silicon film, forming a nickel film on the phosphorus doped silicon film, and annealing the structure to crystallize the phosphorus doped silicon and first silicon films. The first silicon and phosphorous doped silicon films are amorphous at formation.