GAS ANALYSIS DEVICE AND GAS ANALYSIS METHOD
The present invention is a gas analysis device that measures a concentration or partial pressure of a halide contained in a material gas used in semiconductor manufacturing process or a by-product gas generated in semiconductor manufacturing process with good accuracy, the device being for analyzing...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
28.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention is a gas analysis device that measures a concentration or partial pressure of a halide contained in a material gas used in semiconductor manufacturing process or a by-product gas generated in semiconductor manufacturing process with good accuracy, the device being for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the device including a gas cell into which the material gas or the by-product gas is introduced, a laser light source that irradiates the gas cell with laser light whose wavelength is modulated, a light detector that detects the laser light transmitted through the gas cell, and a signal processing unit that calculates the concentration or partial pressure of the halide by using a light absorption signal obtained from an output signal of the light detector. |
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Bibliography: | Application Number: US202118039316 |