Spacer Stack For Magnetic Tunnel Junctions

The present disclosure describes an exemplary method that forms spacer stacks with metallic compound layers. The method includes forming magnetic tunnel junction (MTJ) structures on an interconnect layer and depositing a first spacer layer over the MTJ structures and the interconnect layer. The meth...

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Bibliographic Details
Main Authors LIOU, Joung-Wei, LAN, Chin Kun
Format Patent
LanguageEnglish
Published 21.12.2023
Subjects
ELECTRICITY
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Summary:The present disclosure describes an exemplary method that forms spacer stacks with metallic compound layers. The method includes forming magnetic tunnel junction (MTJ) structures on an interconnect layer and depositing a first spacer layer over the MTJ structures and the interconnect layer. The method also includes disposing a second spacer layer-which includes a metallic compound-over the first spacer material, the MTJ structures, and the interconnect layer so that the second spacer layer is thinner than the first spacer layer. The method further includes depositing a third spacer layer over the second spacer layer and between the MTJ structures. The third spacer is thicker than the second spacer.
Bibliography:Application Number: US202318228282