SEMICONDUCTOR DEVICE

A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain pattern connected to the plurality...

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Bibliographic Details
Main Authors NAM, Yongjun, KIM, Hyojin, KIM, Jinbum, LEE, Sangmoon
Format Patent
LanguageEnglish
Published 21.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode including a plurality of gate electrode portions, a gate electrode portion interposed between adjacent ones of the semiconductor patterns, and a plurality of barrier patterns each comprising an epitaxial layer including single-crystalline silicon oxide. ,A barrier pattern interposed between each of the adjacent ones of the semiconductor patterns and a respective gate electrode portion.
Bibliography:Application Number: US202318112122