PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

According to the present disclosure, the step coverage performance of the film can be improved on the substrate. According to one embodiment of the present disclosure, there is provided a technique that includes: forming a film on a substrate provided with a concave structure on a surface thereof by...

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Bibliographic Details
Main Authors Hatta, Hiroki, OKAJIMA, Yusaku, Imai, Yoshinori
Format Patent
LanguageEnglish
Published 21.12.2023
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Summary:According to the present disclosure, the step coverage performance of the film can be improved on the substrate. According to one embodiment of the present disclosure, there is provided a technique that includes: forming a film on a substrate provided with a concave structure on a surface thereof by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate from a side of the substrate; and (b) supplying a reactive gas to the substrate, and wherein, in (a), by colliding the source gas with an inner wall of the concave structure, the source gas is decomposed to generate an intermediate substance and the intermediate substance adheres to the inner wall of the concave structure, and wherein, in (b), the intermediate substance adhered to the inner wall of the concave structure reacts with the reactive gas.
Bibliography:Application Number: US202318459558