SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE
A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the seco...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
07.12.2023
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Subjects | |
Online Access | Get full text |
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