SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND SEPARATION STRUCTURE

A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the seco...

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Bibliographic Details
Main Authors Lee, Dongseok, Kang, Sekoo, Jeon, Yongho, Bai, Keunhee
Format Patent
LanguageEnglish
Published 07.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.
Bibliography:Application Number: US202318236823