IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure cov...

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Bibliographic Details
Main Authors Liu, Jen-Cheng, Yaung, Dun-Nian, Li, Sheng-Chan, Chen, Sheng-Chau, Kuo, Wen-Chang, Kao, Min-Feng, Hung, Feng-Chi
Format Patent
LanguageEnglish
Published 07.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.
Bibliography:Application Number: US202318446754