SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes word lines, first and second select gate lines, first and second semiconductor columns, first and second bit lines, and first and second transistors. The word lines are arranged in a first direction. The first and second select gate lines extend in a second dir...

Full description

Saved in:
Bibliographic Details
Main Author Utsumi, Tetsuaki
Format Patent
LanguageEnglish
Published 07.12.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor memory device includes word lines, first and second select gate lines, first and second semiconductor columns, first and second bit lines, and first and second transistors. The word lines are arranged in a first direction. The first and second select gate lines extend in a second direction and overlap with the word lines viewed from the first direction. The first and second select gate lines are arranged in the second direction. The first semiconductor column is opposed to the word lines and the first select gate line. The second semiconductor column is opposed to the word lines and the second select gate line. The first and second bit lines extend in a third direction and overlap with the first and second semiconductor columns viewed from the first direction. The first and second transistors are electrically connected to the first and second select gate lines.
Bibliography:Application Number: US202318363872