PHASE-CHANGE MEMORY CELL

Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one lay...

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Bibliographic Details
Main Authors NAVARRO, Gabriele, CAPPELLETTI, Paolo Giuseppe
Format Patent
LanguageEnglish
Published 30.11.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.
Bibliography:Application Number: US202318305268