SEMICONDUCTOR DEVICE

A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a hi...

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Bibliographic Details
Main Authors LEE, Kyunghwan, LEE, Jeonil, CHO, Min Hee
Format Patent
LanguageEnglish
Published 30.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a higher level than the first source/drain region; a first gate electrode facing a first side surface of the first single crystal semiconductor pattern; a first gate dielectric layer, the first gate dielectric layer including a portion between the first single crystal semiconductor pattern and the first gate electrode; and a complementary structure in contact with a second side surface of the first single crystal semiconductor pattern, wherein the complementary structure includes an oxide semiconductor layer.
Bibliography:Application Number: US202318200135