Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer
Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
30.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow. |
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Bibliography: | Application Number: US202318358609 |