Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer

Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The...

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Bibliographic Details
Main Authors Peng, Chun-Yen, Chau, Cheng-Po, Chen, Yi-Fan, Ku, Wen-Yu, Chang, Huicheng, Luan, Hongfa
Format Patent
LanguageEnglish
Published 30.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
Bibliography:Application Number: US202318358609