Semiconductor Device and Method of Manufacturing the Same

A method includes forming a thin-film omega transistor, which includes forming a gate fin over a dielectric layer, forming a gate dielectric on sidewalls and a top surface of the gate fin, and depositing an oxide semiconductor layer over the gate dielectric. The gate fin, the gate dielectric, and th...

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Bibliographic Details
Main Authors Young, Bo-Feng, Yeong, Sai-Hooi, Chui, Chi On
Format Patent
LanguageEnglish
Published 23.11.2023
Subjects
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