Semiconductor Device and Method of Manufacturing the Same
A method includes forming a thin-film omega transistor, which includes forming a gate fin over a dielectric layer, forming a gate dielectric on sidewalls and a top surface of the gate fin, and depositing an oxide semiconductor layer over the gate dielectric. The gate fin, the gate dielectric, and th...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
23.11.2023
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Subjects | |
Online Access | Get full text |
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