Semiconductor Device and Method of Manufacturing the Same

A method includes forming a thin-film omega transistor, which includes forming a gate fin over a dielectric layer, forming a gate dielectric on sidewalls and a top surface of the gate fin, and depositing an oxide semiconductor layer over the gate dielectric. The gate fin, the gate dielectric, and th...

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Bibliographic Details
Main Authors Young, Bo-Feng, Yeong, Sai-Hooi, Chui, Chi On
Format Patent
LanguageEnglish
Published 23.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming a thin-film omega transistor, which includes forming a gate fin over a dielectric layer, forming a gate dielectric on sidewalls and a top surface of the gate fin, and depositing an oxide semiconductor layer over the gate dielectric. The gate fin, the gate dielectric, and the oxide semiconductor layer collectively form a fin structure. A source region is formed to contact first sidewalls and a first top surface of a first portion of the oxide semiconductor layer. A drain region is formed to contact second sidewalls and a second top surface of a second portion of the oxide semiconductor layer.
Bibliography:Application Number: US202217815078