METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more la...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
23.11.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer. |
---|---|
Bibliography: | Application Number: US202318230367 |