METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more la...

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Bibliographic Details
Main Authors YIN, Li-Chao, LIN, Hung-Bin, WU, Hsin-Hsien, CHERN, Chyi Shyuan, KE, Chih-Ming, LO, Ming-Hua
Format Patent
LanguageEnglish
Published 23.11.2023
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Summary:In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
Bibliography:Application Number: US202318230367