PATTERNING MATERIAL INCLUDING SILICON-CONTAINING LAYER AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second lay...

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Bibliographic Details
Main Authors Su, Yi-Nien, Tung, Szu-Ping, Chen, Chun-Kai
Format Patent
LanguageEnglish
Published 23.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.
Bibliography:Application Number: US202318357038