Analysis System

Depth information of a multilayer structure is acquired quickly and with high accuracy. An analysis system includes (a) acquiring a first captured image of a sample SAM viewed from a first direction by irradiating the sample SAM including a multilayer structure with an electron beam EB1 from the fir...

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Bibliographic Details
Main Authors SHIDARA, Takashi, KONNO, Azusa, KIRIHATA, Daiji, MISE, Hiromi, FUJIMURA, Ichiro
Format Patent
LanguageEnglish
Published 23.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:Depth information of a multilayer structure is acquired quickly and with high accuracy. An analysis system includes (a) acquiring a first captured image of a sample SAM viewed from a first direction by irradiating the sample SAM including a multilayer structure with an electron beam EB1 from the first direction, (b) acquiring a second captured image of the sample SAM viewed from a second direction by irradiating the sample SAM with the electron beam EB1 from the second direction, in which the second direction intersects the first direction, (c) acquiring depth information of the multilayer structure using information of the sample SAM including the first captured image, the second captured image, a number of layers of the multilayer structure, a thickness of one layer or a thickness of each layer of the multilayer structure, and a depth at which a first layer of the multilayer structure starts.
Bibliography:Application Number: US202018027501