SILICON WAFER AND EPITAXIAL SILICON WAFER

To provide a silicon wafer with extremely low resistivity by containing an ultra-high concentration of boron, the silicon wafer having a high gettering ability by enabling formation of oxygen precipitates at a high concentration, and making it possible to suppress the occurrence of epitaxial defects...

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Bibliographic Details
Main Author HIRAKI, Keiichiro
Format Patent
LanguageEnglish
Published 16.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a silicon wafer with extremely low resistivity by containing an ultra-high concentration of boron, the silicon wafer having a high gettering ability by enabling formation of oxygen precipitates at a high concentration, and making it possible to suppress the occurrence of epitaxial defects originating from oxygen precipitates when an epitaxial layer is formed. Disclosed is a silicon wafer made of monocrystalline silicon, the silicon wafer containing boron as a dopant and having a resistivity of 1 mΩ·cm or more and 10 mΩ·cm or less, the silicon wafer having an oxygen concentration of 14.5×1017 atoms/cm3 or more and 16×1017 atoms/cm3 or less, and a carbon concentration of 2×1016 atoms/cm3 or more and 5×1017 atoms/cm3 or less, and the silicon wafer being free from COPs and dislocation clusters.
Bibliography:Application Number: US202318314973