METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE

A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The met...

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Bibliographic Details
Main Authors CHIU, Yi-Hsun, LIN, Yi-Hsiung, CHANG, Shang-Wen
Format Patent
LanguageEnglish
Published 16.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The method further includes forming a second spacer layer over the first spacer layer and the power rail. In addition, the method includes forming a fin isolation structure over the power rail between the first fin structure and the second fin structure. The method also includes forming an epitaxial structure over the first fin structure and the second fin structure. The method further includes forming an inter-layer dielectric structure covering the epitaxial structure. In addition, the method includes forming an opening exposing the epitaxial structure, the power rail and the fin isolation structure. The method also includes filling the opening with a first contact structure.
Bibliography:Application Number: US202318357815