SILICON NITRIDE ETCHING COMPOSITIONS AND METHOD

Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully d...

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Bibliographic Details
Main Authors Bilodeau, Steven M, Yevenes, Claudia
Format Patent
LanguageEnglish
Published 16.11.2023
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Summary:Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.
Bibliography:Application Number: US202318144502