SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at le...

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Main Authors TEZUKA, Sachiaki, ICHIJO, Mitsuhiro, TANAKA, Tetsuhiro, ENDO, Toshiya, SHIMOMURA, Akihisa, EGI, Yuji, YAMAZAKI, Shunpei
Format Patent
LanguageEnglish
Published 09.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
Bibliography:Application Number: US202318136431