MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

• Main Author: LV, Zhaohong
• Format: Patent
• Language: English
• Published: 09.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to the technical field of semiconductors, and provides a manufacturing method of a semiconductor structure and a semiconductor structure. The substrate comprises an active region, and the active region is provided with a source region of a first doping type and a drain region of the first doping type; the first dielectric layer is at least partially provided on the substrate and covers a part of the source region and/or a part of the drain region; the second dielectric layer is provided on the substrate, the first dielectric layer is connected to the second dielectric layer, and a thickness of the second dielectric layer is less than a thickness of the first dielectric layer; orthographic projection of the gate structure on the substrate covers orthographic projection of the second dielectric layer and orthographic projection of the first dielectric layer on the substrate.