ACOUSTIC WAVE DEVICE WITH WURTZITE BASED PIEZOELECTRIC LAYER

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication de...

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Bibliographic Details
Main Authors Shin, Kwang Jae, Feld, David Albert, Abbott, Benjamin Paul, Shirakawa, Alexandre Augusto, Hill, Michael David, Bader, Stefan
Format Patent
LanguageEnglish
Published 02.11.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.
Bibliography:Application Number: US202318193317