Process Including a Re-etching Process for Forming a Semiconductor Structure

• Main Authors: Tsai, Hui-Jung, Hsieh, Yun Chen, Kuo, Hung-Jui, Yu, Chen-Hua, Chang, Tai Min, Peng, Jyun-Siang, Lei, Yi-Yang
• Format: Patent
• Language: English
• Published: 02.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.