NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stac...

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Bibliographic Details
Main Authors PARK, Junhyuk, KIM, Joonyong, KIM, Boram, JEON, Woochul, HWANG, Injun, KIM, Jongseob, OH, Jaejoon, HWANG, Sunkyu
Format Patent
LanguageEnglish
Published 26.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.
Bibliography:Application Number: US202318306341