POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF

Disclosed are a power semiconductor device and a preparation method thereof, which belongs to the field of power semiconductor devices. By introducing a punch-through triode structure for electron extraction in a drift region, the frontside hole injection efficiency is reduced, and hole currents fro...

Full description

Saved in:
Bibliographic Details
Main Authors FENG, Hao, SIN, Johnny Kin On, LIU, Yong
Format Patent
LanguageEnglish
Published 26.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed are a power semiconductor device and a preparation method thereof, which belongs to the field of power semiconductor devices. By introducing a punch-through triode structure for electron extraction in a drift region, the frontside hole injection efficiency is reduced, and hole currents from emitters are converted into electron drift currents without significantly increasing on-state voltage drop. In addition, by changing the density and topography of a frontside trench, the adjustment of punch-through area and position is achieved, which in turn changes the electron extraction and frontside hole injection efficiency. The disclosed method increases the design flexibility and design dimension of the device.
Bibliography:Application Number: US202318095217