SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

Multiple dry etching operations are performed to form an opening for an interconnect structure, with a wet cleaning operation performed in between the dry etching operations. This multi-step etch approach increases the effectiveness of residual material removal, which increases the quality of the in...

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Bibliographic Details
Main Authors LAI, Ying-Yu, LIN, Chih-Hsuan, CHEN, Hsi Chung, WANG, Chih-Yun
Format Patent
LanguageEnglish
Published 26.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Multiple dry etching operations are performed to form an opening for an interconnect structure, with a wet cleaning operation performed in between the dry etching operations. This multi-step etch approach increases the effectiveness of residual material removal, which increases the quality of the interconnect structure and reduces the likelihood of under etching, both of which increase semiconductor device yield and semiconductor device performance.
Bibliography:Application Number: US202217660518