RESIST COMPOUND AND METHOD OF FORMING PATTERN USING THE SAME
A resist compound is represented by Formula 1:wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
26.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A resist compound is represented by Formula 1:wherein R1 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms, and A bonded to R1 is O or NR2, wherein R2 is hydrogen, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 1 to 12 carbon atoms, or a hydrocarbon ring group having 3 to 12 carbon atoms. A resist composition includes the resist compound and an organic solvent. A method for forming a resist pattern includes forming a resist layer by applying the resist composition including the resist compound on a substrate, irradiating light onto the resist layer to provide an irradiated resist layer, and developing the irradiated resist layer to form a resist pattern. |
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Bibliography: | Application Number: US202318106254 |