LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE HAVING THE SAME

A light emitting diode and a light emitting device having the same, in which the light emitting diode can include a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a lower active layer disposed there between; and an upper active layer disposed between the...

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Bibliographic Details
Main Authors KANG, Ji Hun, MIN, Dae Hong, BAEK, Yong Hyun
Format Patent
LanguageEnglish
Published 19.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode and a light emitting device having the same, in which the light emitting diode can include a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a lower active layer disposed there between; and an upper active layer disposed between the lower active layer and the second conductivity type semiconductor layer. The lower active layer can emit light having a wavelength shorter than that of the upper active layer, the upper active layer can include a plurality of well layers and a plurality of barrier layers, at least one of the plurality of barrier layers can include a first barrier layer and a second barrier layer having an n-type impurity doping concentration lower than that of the first barrier layer, and the first barrier layer can be closer to the first conductivity type semiconductor layer than the second barrier layer.
Bibliography:Application Number: US202318120168