SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a semiconductor stack, an insulating structure, an electrode structure, and a protective layer. The insulating structure is disposed on the semiconductor stack and includes a first portion. The first portion includes a first opening exposing an inner sidewall of the i...

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Bibliographic Details
Main Authors Chen, Chih-Hao, Shen, Yi-Ru
Format Patent
LanguageEnglish
Published 19.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor stack, an insulating structure, an electrode structure, and a protective layer. The insulating structure is disposed on the semiconductor stack and includes a first portion. The first portion includes a first opening exposing an inner sidewall of the insulating structure. The electrode structure includes a metal material. The protective layer is disposed between the inner sidewall and the electrode structure, and includes a second opening. The electrode structure is disposed in the first opening and in contact with the protective layer, and the electrode structure is electrically connected to the semiconductor stack through the second opening. The insulating structure includes a first material, and the protective layer includes a second material.
Bibliography:Application Number: US202318136347