UNIFORM LAYOUTS FOR SRAM AND REGISTER FILE BIT CELLS
Uniform layouts for SRAM and register file bit cells are described. In an example, an integrated circuit structure includes a six transistor (6T) static random access memory (SRAM) bit cell on a substrate. The 6T SRAM bit cell includes first and second active regions parallel along a first direction...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
12.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Uniform layouts for SRAM and register file bit cells are described. In an example, an integrated circuit structure includes a six transistor (6T) static random access memory (SRAM) bit cell on a substrate. The 6T SRAM bit cell includes first and second active regions parallel along a first direction of the substrate. First, second, third and fourth gate lines are over the first and second active regions, the first, second, third and fourth gate lines parallel along a second direction of the substrate, the second direction perpendicular to the first direction. |
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Bibliography: | Application Number: US202318209988 |