INNER SPACER FOR SEMICONDUCTOR DEVICE
A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
12.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion. |
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Bibliography: | Application Number: US202217716192 |