OVERLAY MEASUREMENT APPARATUS

An overlay measurement apparatus that can quickly measure an overlay error between layers with a large height difference is provided. The overlay measurement apparatus measures an error between a first overlay mark and a second overlay mark formed in a pair on different layers of a wafer. The overla...

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Bibliographic Details
Main Authors KO, Jung Sun, SHIN, Hyeon Gi, RYU, Bo Kyung, PARK, Jin Woo
Format Patent
LanguageEnglish
Published 12.10.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:An overlay measurement apparatus that can quickly measure an overlay error between layers with a large height difference is provided. The overlay measurement apparatus measures an error between a first overlay mark and a second overlay mark formed in a pair on different layers of a wafer. The overlay measurement apparatus includes an imaging system configured to acquire alignment images of a pair of first and second overlay marks at a plurality of focus positions, and a controller communicatively coupled to the imaging system. The overlay measurement apparatus can rapidly and accurately measure an overlay error between layers with a large height difference.
Bibliography:Application Number: US202318314868