SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

A semiconductor memory device includes a back gate electrode, a gate electrode on the back gate electrode, a channel layer between the gate electrode and the back gate electrode, a gate insulating layer between the channel layer and the gate electrode, and a ferroelectric layer between the back gate...

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Bibliographic Details
Main Authors Lee, Bongyong, HAYAKAWA, Yukio, Cho, Siyeon, Park, Hyunmog
Format Patent
LanguageEnglish
Published 05.10.2023
Subjects
ELECTRICITY
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Summary:A semiconductor memory device includes a back gate electrode, a gate electrode on the back gate electrode, a channel layer between the gate electrode and the back gate electrode, a gate insulating layer between the channel layer and the gate electrode, and a ferroelectric layer between the back gate electrode and the channel layer.
Bibliography:Application Number: US202318153630