IMAGE SENSOR

An image sensor includes a semiconductor substrate including a pixel region; a vertical gate electrode disposed in the semiconductor substrate at a center of the pixel region; a charge pocket region provided under the vertical gate electrode in the semiconductor substrate, and doped with a first imp...

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Bibliographic Details
Main Author JIN, Younggu
Format Patent
LanguageEnglish
Published 05.10.2023
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Summary:An image sensor includes a semiconductor substrate including a pixel region; a vertical gate electrode disposed in the semiconductor substrate at a center of the pixel region; a charge pocket region provided under the vertical gate electrode in the semiconductor substrate, and doped with a first impurity having a first conductivity type; a first impurity region which is spaced apart from the charge pocket region in a vertical direction, doped with a second impurity having a second conductivity type, and surrounded by the vertical gate electrode; and a second impurity region which is provided around the vertical gate electrode and doped with the second impurity
Bibliography:Application Number: US202318103670