IMPURITY REDUCTION IN SILICON-CONTAINING FILMS
Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a second reactant; reacting the first and second reactants with one...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
05.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Various embodiments herein relate to methods and apparatus for depositing doped and undoped silicon-containing films having a high degree of purity. In one example, the method includes exposing the substrate to a first reactant and a second reactant; reacting the first and second reactants with one another to form a silicon-containing material and depositing a portion of the silicon-containing film on the substrate; before the silicon-containing film is complete, performing an impurity reduction operation including: (i) generating a plasma from a plasma generation gas comprising inert gas and hydrogen, where the plasma generation gas is substantially free of oxygen, and (ii) exposing the substrate to the plasma to thereby reduce a concentration of fluorine, carbon, hydrogen, and/or nitrogen in the silicon-containing film; and repeating these operations (or a subset thereof) until the silicon-containing film is deposited to a final thickness. |
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Bibliography: | Application Number: US202118003133 |