RADIO FREQUENCY SOURCE FOR INDUCTIVELY COUPLED AND CAPACITIVELY COUPLED PLASMAS IN SUBSTRATE PROCESSING CHAMBERS

A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plas...

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Bibliographic Details
Main Authors Khaja, Abdul Aziz, Rocha-Alvarez, Juan Carlos
Format Patent
LanguageEnglish
Published 05.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.
Bibliography:Application Number: US202217693409